Punto d'origine
United States
Numero del Modello
C4D02120E
Technology
SiC (Silicon Carbide) Schottky
Voltage - DCReverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
10A
Voltage - Forward (Vf) (Max) @ If
1.8 V @ 2 A
standard
No Recovery Time500mA (Io)
Reverse Recovery Timetrr)
0 ns
Current - Reverse Leakage @ Vr
50 µA @ 1200 V
Capacitance @ Vr, F
167pF @ 0V, 1MHz
Mounting Type
SurfaceMount
PackageCase
TO-252-3, DPak (2 Leads + Tab), SC-63
Current Transfer Ratio (Max)
Standard38
Serial Interfaces
Standard32
Current - Peak Output
Standard29
Voltage - Off State
Standard39
Current Transfer Ratio (Min)
Standard37
Frequency - Switching
Standard21
Voltage - Supply (Max)
Standard15
Voltage - Output
Standard33
Resistance (Ohms)
Standard26
Operating Temperature
Standard16
Static dV/dt (Min)
Standard40
Voltage - Supply (Min)
Standard14
Voltage - Isolation
Standard34
Current - LED Trigger (Ift) (Max)
Standard41
Voltage - Breakdown
Standard20
Current - Supply
Standard27
Size / Dimension
Standard35
Current - Output / Channel
Standard23
Frequency - Max
Standard19
Current - DC Forward (If) (Max)
Standard36
Current - Output High, Low
Standard28
Current - On State (It (RMS)) (Max)
Standard42
